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| Ordering number : EN8637 2SK3835 N-Channel Silicon MOSFET 2SK3835 Features * * * General-Purpose Switching Device Applications Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 60 20 50 200 3.0 40 150 --55 to +150 175 50 Unit V V A A W W C C mJ A *1 VDD=20V, L=100H, IAV=50A *2 L100H, single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=25A ID=25A, VGS=10V ID=25A, VGS=4V Ratings min 60 1 10 1.2 21 35 11.5 16 15 22 2.6 typ max Unit V A A V S m m Marking : K3835 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2505QA MS IM TB-00001913 No.8637-1/4 2SK3835 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=50A VDS=30V, VGS=10V, ID=50A VDS=30V, VGS=10V, ID=50A IS=50A, VGS=0V Ratings min typ 3500 500 350 26 185 265 220 67 10.6 10 1.02 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm 7505-003 16.0 3.4 5.0 8.0 Switching Time Test Circuit VIN VDD=30V 5.6 3.1 10V 0V VIN ID=25A RL=1.2 21.0 22.0 D 2.0 VOUT 4.0 PW=10s D.C.1% 2.8 2.0 20.4 G 2.0 0.6 2SK3835 P.G 50 1.0 S 1 2 3 3.5 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PML 5.45 5.45 Avalanche Resistance Test Circuit L 50 2SK3835 10V 0V 50 VDD No.8637-2/4 2SK3835 80 70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ID -- VDS 8V 6V Tc=25C 80 ID -- VGS Tc= --25 C VDS=10V 70 60 50 40 30 Drain Current, ID -- A 10 Drain Current, ID -- A 4V Tc= 7 20 10 0 0 0.5 1.0 1.5 2.0 2.5 VGS=3V 3.0 --25 C 25 C 5C 3.5 4.0 4.5 25 C 5.0 Drain-to-Source Voltage, VDS -- V 35 IT08435 35 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS ID=25A RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 30 30 25 25 20 20 15 Tc=75C 2 I D= 15 VG 5A, 4V S= 25C 10 I D= , VG 25A 10 S= V --25C 10 5 0 2 3 4 5 6 7 8 9 10 IT08437 5 0 --50 --25 0 25 50 75 100 125 75 C IT08436 150 IT08438 1.5 IT08440 30 IT08442 V Gate-to-Source Voltage, VGS -- V 100 yfs -- ID Case Temperature, Tc -- C 100 7 5 3 2 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 7 5 VDS=10V C 25 2 10 7 5 3 2 1.0 7 5 0.1 0.1 7 5 3 2 0.01 7 5 3 2 0.001 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 1000 7 5 7 100 IT08439 10000 7 0 0.3 Tc=7 5C 25C --25C 0.6 0.9 = Tc 5 --2 C Source Current, IS -- A 3 10 7 5 3 2 1.0 7 5 3 2 C 75 1.2 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 VDD=30V VGS=10V td(off) 5 Ciss tf Ciss, Coss, Crss -- pF 3 2 100 7 5 3 2 1000 7 5 3 2 100 tr Coss Crss td(on) 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 7 100 IT08441 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V No.8637-3/4 2SK3835 10 9 VGS -- Qg VDS=30V ID=50A Drain Current, ID -- A 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=200A ID=50A 10 10 s Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 IT08443 10 1m s m DC 100 s ms op era tio n 0 s Operation in this area is limited by RDS(on). Tc=25C Single pulse 2 3 5 7 1.0 2 3 0.1 0.1 5 7 10 2 3 Total Gate Charge, Qg -- nC 3.5 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 45 40 35 30 25 20 15 10 5 0 5 7 100 IT08444 PD -- Tc Allowable Power Dissipation, PD -- W 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT08460 Case Temperature, Tc -- C IT08461 Note on usage : Since the 2SK3835 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2005. Specifications and information herein are subject to change without notice. PS No.8637-4/4 |
Price & Availability of 2SK3835
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